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IEEE Workshop on Microelectronics and Electron Devices (WMED)

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Invited Tutorial - Emerging Magnetic Memories

Dr. William J. Gallagher, International Business Machines


This talk will review emerging MRAM technologies, beginning with field-switched MRAMs that have been in product form for several years now, and extending to spin-torque MRAM under development now for higher density applications. Considerations for scaling to very small cell sizes will be discussed; in particular the importance of perpendicular magnetic anisotropy materials. Standard MRAM approaches involve the two-terminal magnetic tunnel junction device, that both stores the information and is used to read it out. A three-terminal magnetic device with potential advantages for speed will also be discussed, along with another approach dubbed "Racetrack" memory, which has the potential for three-dimensional shift-register like storage and very high densities.

Speakerís biography:

William J. Gallagher joined IBM in 1979 after receiving his B.S. degree summa cum laude from Creighton University and his Ph.D. from MIT, both in physics. At IBM, he first worked on, and later managed, Josephson and Exploratory Cryogenics Research efforts. In 1989 Dr. Gallagher participated in the formation of the IBM-AT&T-MIT-founded Consortium for Superconducting Electronics and then served a Director of this consortium for six years. Since 1995, Dr. Gallagher has been leading MRAM development efforts at IBM. Currently, he is senior manager of Exploratory Magnetic Memory and Quantum Computing in IBM Research. Dr. Gallagher has over 160 technical publications, holds sixteen U.S. patents, and is a fellow of the IEEE and of the American Physical Society. He has served on the Executive Committee of the APS Forum on Physics and Society, on the Board of Directors of the Applied Superconductivity Corporation, and on study and review panels convened by universities and by organizations such as the National Research Council, the National Science Foundation, and the Office of Naval Research.





This workshop is receiving technical co-sponsorship support from the IEEE Electron Devices Society.

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