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Scanning Frequency Comb Microscopy: A New Method for Sub-nm 3-D Dopant Profiling

M. J. Hagmann
NewPath Research L.L.C.
Salt Lake City, UT, USA

D. A. Yarotski
Los Alamos National Laboratory
Los Alamos, NM, USA


A unique microwave frequency comb is generated by focusing a mode-locked ultrafast laser on the tunneling junction in a scanning tunneling microscope (STM). The dependence of the depletion capacitance in a semiconductor on the applied voltage is used in capacitance-voltage dopant profiling. Thus, if a semiconductor biased into depletion is used as the sample in a STM, because the impedance of the depletion layer attenuates the frequency comb, it is possible that measurements of the power at the harmonics of the comb, with different values of the bias, could be used to determine the concentration of dopant atoms.





This workshop is receiving technical co-sponsorship support from the IEEE Electron Devices Society.

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