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IEEE Workshop on Microelectronics and Electron Devices (WMED)

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Invited Tutorial - Resistive Random Access Memory (RRAM): Materials and Devices

Prof. Wei Lu, University of Michigan


Nanoscale resistive memories (RRAMs) have generated extensive interest recently as a promising candidate for future non-volatile memory applications. In this talk, I will briefly summarize the current status of RRAM research, from the switching mechanism, modeling, material choice, performance metrics, to prototype memory demonstrations. Recently improved understanding of the resistance switching effects has led to improved device performance. However, challenges such as the tradeoff between programming current and retention still need to be overcome. Another major challenge for RRAM is the “sneak path” problem in the interconnected passive network, and proper “select” elements need to be developed to break the parasitic paths. Effective 3D integration techniques also need to be demonstrated. Different approaches to address these problems will be discussed.

Speaker’s biography:

Wei Lu is an associate professor at the Electrical Engineering and Computer Science Department at the University of Michigan – Ann Arbor. He received B.S. degree in physics from Tsinghua University, Beijing, China, in 1996, and Ph.D. in physics from Rice University, Houston, TX in 2003. From 2003 to 2005, he was a postdoctoral research fellow at Harvard University, Cambridge, MA. He joined the faculty of UM in 2005. His research interest includes high-density memory based on two-terminal resistive switches (RRAM), memristor-based neuromorphic circuits, aggressively scaled nanowire transistors, and electrical transport in low-dimensional systems. He is a recipient of the NSF CAREER Award, co-Editor-in-Chief for Nanoscale, Editorial Board member of Scientific Reports (Nature Publishing Group), and a member of the ITRS Emerging Research Devices Working group. He has published 50 journal papers with over 4200 SCI citations to date.





This workshop is receiving technical co-sponsorship support from the IEEE Electron Devices Society.

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