ieeelogoblue.gif Electron Devices Society
Santa Clara Valley Chapter
http://www.ewh.ieee.org/r6/scv/eds/
The field of interest of the IEEE EDS is all aspects of the physics, theory, and phenomena of electron and ion devices, such as elemental and compound semiconductor devices, quantum effect devices, optical devices, tubes and other vacuum devices.

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May 1, 2006
For an online version of this announcement with active links, please visit
http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20060501.html
May 9th Meeting
Prof. M Selim Ünlü - Boston U
"Nanoscale Imaging of Semiconductor and Biological Systems"
May 19th Half-Day Symposium
Seven Speakers On
"Analog and Mixed Signal Devices/Applications"


 
Other IEEE Events
UGIM Symposium at San Jose State - June 25–28, 2006
 
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Selim-Unlu-BostonU-small.jpg Upcoming IEEE SCV Joint LEOS/EDS Evening Meeting:

May 9, 2006 IEEE SCV Joint LEOS/EDS Meeting:

"Nanoscale Imaging of Semiconductor and Biological Systems"

Speaker: Prof. M Selim Ünlü - Boston University
Subject: "Nanoscale Imaging of Semiconductor and Biological Systems"
Location: National Semiconductor, Building 31 Large Auditorium,
955 Kifer Road, Sunnyvale, CA.     See the meeting location map
Time: 6:00 PM - Pizza , 6:15 PM - Lecture
Speaker Contact: Brent Whitlock

Abstract:

We present two innovative approaches to go beyond the capabilities of standard optical microscopy which is limited to a transverse resolution of approximately half a wavelength due to the diffraction, also termed the Rayleigh or Abbe limit. The resolution is inversely proportional to the Numerical Aperture (NA).

One method to increase the NA is to increase n, the refractive index of the material in the object space. We recently developed a new technique involving a Numerical Aperture Increasing Lens (NAIL) for diffraction limited subsurface microscopy. The NAIL technique is demonstrated by near-IR inspection of silicon integrated circuits yielding a 230 nm resolution at 1050 nm wavelength representing a factor of 4 improvement over the state-of-the-art.

We have applied this technique to photoluminescence and PLE measurements of InAs/GaAs quantum dots and demonstrated high collection efficiency and spatial resolution better than 400 nm. We also used NAIL technique in subsurface thermal emission microscopy of Si integrated circuits and achieved improvements in the amount of light collected and the spatial resolution, well beyond the limits of conventional thermal emission microscopy.

We experimentally demonstrate a lateral spatial resolution of 1.4 µm and a longitudinal spatial resolution of 7.4 µm, for thermal imaging at free space wavelengths up to 5 µm. We also examine in detail the ability of sharp metal tips to enhance local optical fields and describe a new approach to nano-optics, that of combining solid immersion microscopy with tip-enhanced focusing and show how such an approach may lead to 20 nm resolution with near-unity throughput.

Spatial resolution can also be improved beyond the diffraction limit by collecting spectral information. We have built on our experience on resonant optoelectronic devices and developed a novel application to fluorescence microscopy that promises nanometer resolution in biological imaging.

Over the past 20 years fluorescence microscopy has developed into a standard tool in biological sciences. Today, confocal microscopy provides three-dimensional resolution on lateral length scales of 0.5 micron and axial length scales of 0.75 micron with good imaging speed for studies of biological systems.

In the past few years, the increased resolution achieved through advanced fluorescent probes and two-photon sources has made possible the coarse examination of structures at the subcellular level, complementing decades of molecular biology with the nascent ability to localize subcellular processes.



Upcoming IEEE SCV Joint LEOS/EDS Evening Meeting:

Abstract (Continued):

We have developed an alternative method, spectral self-interference fluorescent microscopy. The technique transforms the variation in emission intensity for different path lengths used in fluorescence interferometry to a variation in the intensity for different wavelengths in emission, encoding the high-resolution information in the emission spectrum. Using monolayers of streptavidin, we have demonstrated better than 5nm axial height determination for thin layers of fluorophores and built successful models that accurately fit the data. Initial experiments on fluorescently labeled lipid layers successfully determined the binding of fluorescent molecules in membranes with sub-nanometer precision.

Recently, the orientation of ss and dsDNA monolayers on silicon oxide is studied by tracing the location of a fluorescent label attached to the DNA.

Biography:

In 2005, Professor Ünlü was selected as an IEEE Laser and Electro-Optics Society (LEOS) Distinguished Speaker.

M. Selim Ünlü is a Professor of Electrical and Computer Engineering, Biomedical Engineering, and Physics at Boston University. Prof. Ünlü received the B.S. degree in electrical engineering from Middle East Technical University, Ankara, Turkey, in 1986, and the M.S.E.E. and Ph.D. in Electrical Engineering from the University of Illinois, Champaign-Urbana, in 1988 and 1992, respectively.

In 1992, he joined the Department of Electrical and Computer Engineering, Boston University.

Dr. Ünlü's career interest is in research and development of photonic materials, devices and systems focusing on the design, processing, characterization, and modeling of semiconductor optoelectronic devices, especially photodetectors, as well as high-resolution microscopy and spectroscopy of semiconductor and biological materials.

During 1994-1995, Dr. Ünlü served as the Chair of IEEE Laser and Electro-Optics Society, Boston Chapter, winning the LEOS Chapter-of-the-Year Award. He was awarded National Science Foundation Research Initiation Award in 1993, United Nations TOKTEN award in 1995 and 1996, and both the National Science Foundation CAREER and Office of Naval Research Young Investigator Awards in 1996.

He has authored and co-authored over 200 technical articles and several book chapters and magazine articles; edited one book; and holds several patents.

His professional service includes the former chair of the IEEE LEOS technical committee on photodetectors and imaging. He is the current chair of IEEE LEOS Nanophotonics committee.

He is also serving as an Associate Editor for IEEE Journal of Quantum Electronics and a VP of the IEEE LEOS.

For more information on the   Physics Department - Boston University

For more information on   Prof. M Selim Ünlü - Boston University

For more information on the   IEEE SCV LEOS Chapter



IEEE SCV EDS Half-Day Symposium:
National Semiconductor Auditorium: May 19, 2006

"Analog and Mixed Signal Devices/Applications"

Speakers: See the speaker list and topics below
Subject: "Analog and Mixed Signal Devices/Applications"
Date: Friday, May 19, 2006
Location: National Semiconductor, Building 31 Large Auditorium,
955 Kifer Road, Sunnyvale, CA.   See the meeting location map
Time: 12:30 PM to 5:45 PM
Registration: 12:30 PM to 1:00 PM
RSVP: Please click on the   RSVP   link to send an auto-generated email
message so we will know the number of expected attendees.

Symposium Contact: Prasad Chaparala at 408-721-8985

Symposium Fees:

      IEEE Members - $55
      Nonmembers - $65
      Unemployed - $20
      Students - $20

No pre-registration required. Pay by cash or check at the door. No credit cards accepted.

Details:

This workshop is dedicated to the process, device, and design challenges in analog and mixed signal applications.

In Session 1, the design and semiconductor process characterization and modeling aspects are emphasized.

In Session 2, the analog and mixed signal applications and CAD tools are emphasized.



IEEE SCV EDS Half-Day Symposium:
National Semiconductor Auditorium: May 19, 2006

"Analog and Mixed Signal Devices/Applications"

The currently scheduled symposium speakers and speaker topics:

Session 1 Chair: Prasad Chaparala, National Semiconductor

1:05   Introduction
          ·   Prasad Chaparala, National Semiconductor
1:15   Analog Design in Sub-100nm Technologies
          ·   Professor Boris Murmann, Stanford
1:45   Future processes challenges for the RF and high speed integrated systems
          ·   Stephane Barbu, Maxim Integrated Products, Inc.
2:15   Characterization and Modeling of Process Variations
          ·   Seán Minehane, PDF Solutions Inc.
2:45   Break for Snacks and Drinks

Session 2 Chair: Jayasimha Prasad, Maxim Integrated Products, Inc.

3:15   ESD Device Solutions for Analog Design: Challenges and Opportunities
          ·   V.A. Vashchenko, National Semiconductor
3:45   CMOS designs at 60GHz and beyond for 1Gbit/s+ wireless communications
          ·   Luiz M Franca-Neto, Intel
4:15   Mixed-Signal Simulation Challenges and Trends at 65nm, 45nm and Below
          ·  Dr. Bruce W. McGaughy, Cadence Design Systems
4:45   Challenges in Analog and Mixed Signal Testing
          ·   Shoba Krishnan, Santa Clara University
5:15   Speaker Interviews
          ·   Network with Attendees
5:45   Adjourn

CD-ROMs with the Half-Day Symposium speaker slides will be distributed at the end of Session 2.

Symposium Brochure: IEEE SCV EDS May 19, 2006 Half-Day Symposium


Upcoming IEEE EDS UGIM Microelectronics Symposium:
San Jose State University: June 25 – June 28, 2006

"16th Biennial University/Government/Industry Microelectronics Symposium"

Speakers: See the 2006 UGIM Symposium link
Subject: "16th Biennial University/Government/Industry Microelectronics Symposium"
Location: San Jose State, San Jose, CA.
      See the SJSU campus map
Time: 8:00 AM - 6:00 PM - Daily
Registration: 2006 UGIM Symposium Registration
Speaker Contact: David Parent at 408-924-3963

Abstract of Symposium:

The purpose of this symposium is to bring together leading engineering educators and researchers from university, government, and industry around the world to promote microelectronics and other forms of micro/nano-fabrication.

Representatives of university fabrication labs, ranging from new start-up labs to nationally recognized facilities, have found this symposium an excellent forum for exchanging information.

Government agencies such as NSF, NIH, NIST, SEMATECH, SRC, DARPA and ONR regularly participate with papers and updates on funding opportunities. Industry interactions with universities, including technology transfer, collaborative research, and training efforts are frequently presented.



Upcoming IEEE EDS UGIM Microelectronics Symposium:
San Jose State University: June 25 – June 28, 2006

Scope of Symposium:

  • New Initiatives in University microelectronics programs, courses, laboratories, technology transfer, industry interaction
  • Government-University microelectronics research programs
  • Microelectronic research projects in the areas of materials, simulation, design, processes, testing, and reliability
  • Process equipment development, manufacturing, statistical process control and design of experiments
  • MEMS programs, courses, applications, processing, interactions, and research
  • Standard silicon and compound semiconductors
  • Bioengineering and Biotechnology
  • Nanotechnology and nanofabrication
  • Metrology and sensors
  • University microelectronics research facilities

For more information on the   2006 UGIM Symposium

For more information on the   2006 UGIM Symposium Location

For more information on the   2006 UGIM Symposium Registration



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