
	Electron Devices Society Santa Clara Valley Chapter http://www.ewh.ieee.org/r6/scv/eds/


The field of interest of the IEEE EDS is all aspects of the physics, theory, and phenomena of electron and ion devices, such as elemental and compound semiconductor devices, quantum effect devices, optical devices, tubes and other vacuum devices. Please Post and Circulate within your Company.	August 1, 2006
For an online version of this announcement with active links, please visit http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20060801.html

August 8th Meeting
Souvik Mahapatra - IITB, Mumbai on "Electrical Characterization and Modeling of NBTI in p-MOSFET Devices"

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August 8, 2006 IEEE SCV EDS Meeting:

"Electrical Characterization and Modeling of NBTI in p-MOSFET Devices"

Speaker: Associate Prof. Souvik Mahapatra - Indian Institute of Bombay, Mumbai/Applied Materials
Subject: "Electrical Characterization and Modeling of NBTI in p-MOSFET Devices"
Location: National Semiconductor, Building 31 Large Auditorium,
955 Kifer Road, Sunnyvale, CA. See the meeting location map
Time: 6:00 PM - Pizza , 6:15 PM - Lecture
Speaker Contact: Samar Saha

Abstract:

In this talk, Associate Professor Souvik Mahapatra will discuss the following topic: Electrical Characterization and Modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFET Devices.

Negative Bias Temperature Instability (NBTI) is a serious reliability concern for p-MOSFETs having ultrathin silicon oxynitride gate dielectrics. This talk will focus on electrical characterization and modeling of defects created during NBTI stress.

After a brief introduction, proper choice of stress bias will be discussed such that unwanted bulk-trap generation is avoided during accelerated stress testing.

Various types of interface defects will be discussed and the one associated with "NBTI" will be identified. The importance of measurement delay and its severe impact on NBTI time evolution will be specially highlighted.

NBTI generation and recovery results obtained using a delay-free measurement respectively during stress and post-stress will be presented for a wide range of samples, ie. different EOT, nitridation type, and dose.

It will be shown that NBTI generation and recovery can be fully explained using the well-known Reaction-Diffusion model for interface-traps. The impact of NBTI recovery on DC versus AC lifetimes will also be discussed.

Upcoming IEEE SCV EDS Evening Meeting:

Biography:

Souvik Mahapatra received his MSc (Physics) from Jadavpur University, Calcutta, in 1995 and his PhD in Electrical Engineering from the Indian Institute of Technology, Bombay (IITB), India in 1999.

From 2000 to 2001 he was at Bell Laboratories, Lucent Technologies, in Murray Hill, NJ, USA.

Since 2002 he is with the Department of Electrical Engineering, IITB, where he is presently an Associate Professor.

In 2006, he is a Visiting Fellow at Applied Materials in Santa Clara, CA.

His research interests are electrical characterization of defects in dielectric-semiconductor interfaces, hot-carrier and bias temperature instability in CMOS devices, high-k and novel dielectrics for CMOS, and Flash EEPROMs.

He has published more than 60 papers in refereed international journals and conferences, was invited to speak at several major international conferences including the IEEE IEDM, was a tutorial speaker at the IEEE IRPS, and has worked as a reviewer for many international journals and conferences.

For more information on Associate Professor Souvik Mahapatra

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