
	Electron Devices Society Santa Clara Valley Chapter http://www.ewh.ieee.org/r6/scv/eds/


The field of interest of the IEEE EDS is all aspects of the physics, theory, and phenomena of electron and ion devices, such as elemental and compound semiconductor devices, quantum effect devices, optical devices, tubes and other vacuum devices. Please Post and Circulate within your Company.	October 2, 2007
For an online version of this announcement with active links, please visit http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20071001.html

October 9th Meeting
Ted Kamins, HP Labs
"Metal Catalyzed Silicon Nanowires: Growth and Devices"

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Upcoming IEEE SCV EDS Evening Meeting:

Tuesday, October 9, 2007 IEEE SCV EDS Meeting:

"Metal Catalyzed Silicon Nanowires: Growth and Devices"

Speaker: Dr. Ted Kamins, HP Labs
Subject: "Metal Catalyzed Silicon Nanowires: Growth and Devices"
Location: National Semiconductor Building E Auditorium,
2900 Semiconductor Drive, Santa Clara, CA 95051.
See the NSC Campus driving directions
and the NSC Building E location map
Time: 6:00 PM - Pizza , 6:15 PM - Lecture
Speaker Contact: J. Prasad

Abstract:

Metal-catalyzed, self-assembled, one-dimensional semiconductor nanowires grown by chemical vapor deposition are being considered as possible device elements to augment and supplant conventional electronics and to extend the use of CMOS beyond the physical and economic limits of conventional technology. Such nanowires can create nanostructures without the complexity and cost of extremely fine-scale lithography. The well-known and controllable properties of silicon make silicon nanowires especially attractive. Easy integration with conventional electronics will aid their acceptance and incorporation.

The diameter of the nanowires depends on the size of the nanoparticles, which in turn can be controlled by varying the amount of catalyst deposited and the annealing conditions. The nanowires make good electrical connection to the substrate on which they are grown. They generally grow epitaxially along <111> directions. Connections can be formed to both ends of a nanowire by growing it laterally from a vertical (111) surface formed by etching the top Si(110)layer of a silicon-on-insulator structure into isolated electrodes. When the nanowire impinges on a second surface, it makes good mechanical and electrical connection to the second surface.

Upcoming IEEE SCV EDS Evening Meeting:

Field-effect structures are one class of devices that can be readily built in silicon nanowires. Because the ratio of surface to volume in a thin nanowire is high, conduction through the nanowire is very sensitive to surface conditions, making it effective as the channel of a field-effect transistor or as the transducing element of a gas or chemical sensor. As the nanowire diameter decreases, a greater fraction of the mobile charge can be modulated by a given external charge, increasing the sensitivity. Having the gate of a nanowire transistor completely surround the nanowire also enhances the sensitivity. For a field-effect sensor to be effective, the charge must be physically close to the nanowire so that the majority of the compensating charge is induced in the nanowire and so that ions in solution do not screen the charge. Because only induced charge is being sensed, a coating that selectively binds the target species should be added to the nanowire surface to distinguish between different species in the analyte.

Biography:

Ted Kamins is Principal Scientist in the Quantum Science Research group at Hewlett-Packard Laboratories in Palo Alto, California, where he is conducting research on advanced nanostructured electronic materials and devices. He is also a Consulting Professor in the Electrical Engineering Department at Stanford University.

He received his degrees from the University of California, Berkeley. He then joined the Research and Development Laboratory of Fairchild Semiconductor, where he worked with epitaxial and polycrystalline silicon before moving to Hewlett-Packard, where he has worked on numerous semiconductor material and device topics.

Ted is co-author with R. S. Muller of the textbook "Device Electronics for Integrated Circuits" and is author of the book "Polycrystalline Silicon for Integrated Circuits and Displays." He is a Fellow of the IEEE and a Fellow of the Electrochemical Society.

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