ieeelogoblue.gif Electron Devices Society
Santa Clara Valley Chapter
http://www.ewh.ieee.org/r6/scv/eds/
The field of interest of the IEEE EDS is all aspects of the physics, theory, and phenomena of electron and ion devices, such as elemental and compound semiconductor devices, quantum effect devices, optical devices, tubes and other vacuum devices.

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February 3, 2008
For an online version of this announcement with active links, please visit
http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20080114.html
February 8th Meeting
Dr. Joachim N. Burghartz, Institute for Microelectronics Stuttgart (IMS CHIPS)
"Ultra-thin Chips - a New Paradigm in Silicon Technology"


 


 


 
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Upcoming IEEE SCV EDS Evening Meeting:

Friday, February 8, 2008 IEEE SCV EDS Meeting:

"Ultra-thin Chips - a New Paradigm in Silicon Technology"

Speaker: Dr. Joachim N. Burghartz, Institute for Microelectronics Stuttgart (IMS CHIPS
Subject: "Ultra-thin Chips - a New Paradigm in Silicon Technology"
Location: National Semiconductor, Building E1, Conference Center,
      2900 Semiconductor Drive, Santa Clara, CA 95051.  
      See the NSC Campus driving directions
      and the NSC Building E location map
Time: 5:15 PM - Pizza , 5:30 PM - Lecture
Speaker Contact: Samar Saha

Abstract:

In contrast to conventional thick silicon chips ultra-thin chips will be the basis for new applications, such as 3D integrated circuits (3D-ICs) and plastic electronics. This talk will introduce and compare two generically different process technologies that can be exploited for the fabrication of ICs on extremely thin chips. Furthermore, several application results and demonstrations will be presented and discussed based on material that has been presented at the recent IEDM and ISSCC conferences. 



Upcoming IEEE SCV EDS Evening Meeting:

Biography:

Joachim N. Burghartz is an IEEE Fellow, an IEEE Distinguished Lecturer, and an AdCom member of the IEEE Electron Devices Society. He received his MS degree from RWTH Aachen in 1982 and his PhD degree in 1987 from the University of Stuttgart, both in Germany.

From 1987 thru 1998 he was with the IBM T. J. Watson Research Center in Yorktown Heights, New York, where he was engaged in early development of SiGe HBT technology and later in the integration of passive components, particularly inductors, for application to monolithic RF circuits. From 1998 until 2005 he was with TU Delft in the Netherlands as a full professor and from 2001 as the Scientific Director of the Delft research institute DIMES.

In fall 2005 he moved to Stuttgart, Germany, to head the Institute for Microelectronics Stuttgart (IMS CHIPS). In addition he is affiliated with the University of Stuttgart as a full professor. Dr. Burghartz has published more than 250 reviewed articles and holds some 30 patents.

 



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