
	Electron Devices Society Santa Clara Valley Chapter http://www.ewh.ieee.org/r6/scv/eds/


The field of interest of the IEEE EDS is all aspects of the physics, theory, and phenomena of electron and ion devices, such as elemental and compound semiconductor devices, quantum effect devices, optical devices, tubes and other vacuum devices. Please Post and Circulate within your Company.	February 21, 2008
For an online version of this announcement with active links, please visit http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20080227.html

February 27th Meeting
Dr. Geert Vandenberghe, IMEC
"Immersion and EUV Lithography"

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Upcoming IEEE SCV EDS Evening Meeting:

Wednesday, February 27, 2008 IEEE SCV EDS Meeting:

"Immersion and EUV Lithography"

Speaker: Dr. Geert Vandenberghe, IMEC
Subject: "Immersion and EUV Lithography"
Location: National Semiconductor, Building E1, Conference Center,
2900 Semiconductor Drive, Santa Clara, CA 95051.
See the NSC Campus driving directions
and the NSC Building E location map
Time: 6:30 PM - Pizza , 7:00 PM - Lecture
Speaker Contact: Philippe Jansen

Abstract:

Lithography is one of the key drivers of the device and circuit scaling in integrated circuits. For the 45nm half-pitch node, 193nm immersion lithography has clearly emerged on the company roadmaps as primary technology for patterning the 45nm half-pitch node. For the next generations, the choices have not been finalized yet and a number of different options continue to be explored:

a) Extend immersion lithography to its limits by inserting higher refractive index materials in the optical path.
b) Use "conventional" water based 193nm immersion combined with double patterning integration flows.
c) Switch to the very low 13.5nm wavelength of extreme UV lithography.

All three options have some clear advantages as well as drawbacks, which form the basis of the current Advanced Lithography research program at IMEC. The progress, challenges and outlook for these litho options will be discussed.

Upcoming IEEE SCV EDS Evening Meeting:

Biography:

Geert Vandenberghe received his Master of Science and PhD degree from the Katholieke Universiteit of Leuven in Belgium. In 1995 he joined the Lithography Department at IMEC where he has been working on resists, imaging, OPC and resolution enhancement techniques.

He is currently managing the Reticle and Imaging Group of the Lithography Department and Program Manager of the Advanced Lithography Research Program at IMEC.

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