
	Electron Devices Society Santa Clara Valley Chapter http://www.ewh.ieee.org/r6/scv/eds/


The field of interest of the IEEE EDS is all aspects of the physics, theory, and phenomena of electron and ion devices, such as elemental and compound semiconductor devices, quantum effect devices, optical devices, tubes and other vacuum devices. Please Post and Circulate within your Company.	March 11, 2008
For an online version of this announcement with active links, please visit http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20080318.html

March 18th Meeting
Dr. Kingsuk Maitra, AMD
"The Promise of High-K/Metal Gates"

Subscribe to the
IEEE SCV EDS Email List

Upcoming IEEE SCV EDS Evening Meeting:

Tuesday, March 18, 2008 IEEE SCV EDS Meeting:

"The promise of high-K/metal gates – From electronic transport phenomena to emerging device/circuit applications"

Speaker: Dr. Kingsuk Maitra, AMD
Subject: "The promise of high-K/metal gates – From electronic transport phenomena to emerging device/circuit applications"
Location: National Semiconductor, Building E1, Conference Center,
2900 Semiconductor Drive, Santa Clara, CA 95051.
See the NSC Campus driving directions
and the NSC Building E location map
Time: 6:30 PM - Pizza , 7:00 PM - Lecture
Speaker Contact: Manuj Rathor

Abstract:

Recent advancements of gate stack engineering have enabled the introduction of high-K/metal gates into mainstream CMOS device applications for 45 nm and beyond technology space.

In this talk, we take a critical look back into the key steps which made this possible with primary focus on transport phenomena in transistors in presence of high-K/metal gates. Against this backdrop, the interaction of high-K/metal gates with end of roadmap devices would be thoroughly explored.

High-K/metal gates have interesting ramifications in the circuit space-from NBTI (negative bias temperature instability) to high-field mobility,

Upcoming IEEE SCV EDS Evening Meeting:

the high-K gate induced physical phenomena and their impact on device and circuit performance and reliability would be discussed.

To conclude, this talk would also conjecture on the continued scalability of high-K gate stacks for futuristic CMOS device architectures.

Biography:

Kingsuk Maitra graduated with a PhD in Electrical Engineering from the Department of Electrical and Computer Engineering, NC-State University, Raleigh in December 2005 where he worked on electronic transport in bulk-Si nMOSFET’s in presence of high-K gate insulator. He also holds a Masters degree in Microelectronics from the Indian Institute of Science, Bangalore, India and a Masters degree in Physics from the University of Kalyani, India.

He is currently working as a Senior Technology and Integration Engineer with AMD for the IBM/AMD pre-T0 Research alliance at Albany Nanotech, NY. His current work focuses on finding device solutions for 22 nm Technology node. As a PhD student, he worked as a summer intern for three summers (2003, 2004, and 2005) with the Advanced Gate stack team at IBM Research, IBM TJ Watson Research Center at Yorktown Heights on high-K gate dielectric based devices.

His research interests also include transport phenomena in end of roadmap CMOS devices, gate stack engineering in nanometer scale devices for future electronic applications.

The IEEE SCV EDS Email Distribution List:
How to Subscribe/Unsubscribe

Subscribe to the IEEE SCV EDS Email Distribution List

You provide your own subscribe/unsubscribe services, and can join and leave the email Distribution List (DList) for the IEEE Santa Clara Valley (SCV) Electron Devices Society (EDS) Chapter when desired.

The primary purpose of this Dlist is to distribute the monthly meeting and seminar announcements for the local IEEE SCV EDS Chapter. The names and email addresses in this Dlist will never be sold or shared with others outside of the Santa Clara Valley Section of the IEEE. Only the list administrator can access the Dlist information. The Dlist information is stored on a secure server at the IEEE Headquarters in New Jersey, USA.

You cannot send messages to the members of the IEEE SCV EDS Email Dlist.

The name of the IEEE SCV EDS Dlist is "EDS-CHAP-SCV".

To subscribe to or update the IEEE SCV EDS Dlist, send an email message to listserv@listserv.ieee.org with the following choices in the BODY (not Subject) of the message:

to SUBSCRIBE: subscribe eds-chap-scv FirstName LastName
an example: subscribe eds-chap-scv John Doe

You will receive a LISTSERV confirmation request by email; click REPLY, then send OK as the first line in the BODY of your message, as specified.

If your SUBSCRIBE email message and REPLY are successful, you do not need to read the additional information given below.

The IEEE SCV EDS Email Distribution List:
How to Subscribe/Unsubscribe

Subscribe to the IEEE SCV EDS Email Distribution List

to UNSUBSCRIBE: unsubscribe eds-chap-scv

Your email address is automatically captured by LISTSERV. To unsubscribe, it must agree exactly with the email address you used to subscribe to the Dlist.

Use a two-step procedure to change from an old to a new email address.
First, send an unsubscribe message using your old email address. Second, re-subscribe to the IEEE SCV EDS Dlist by sending a subscribe message using your new email address. Send email to the IEEE SCV EDS Dlist Administrator if you no longer have access to an old email address that you would like to delete so we can keep the IEEE SCV EDS Dlist database current.

Go to the IEEE SCV EDS Dlist URL for more information about how to use our email distribution list.

Email the IEEE SCV EDS Dlist Administrator for assistance with special cases.

Visit the IEEE SCV Electron Devices Society Website

Visit the IEEE SCV EDS Website at http://www.ewh.ieee.org/r6/scv/eds/ the first week of each month for more details about the IEEE SCV Electron Devices Society's upcoming monthly events, as well as the speaker slide sets for the IEEE SCV EDS past events.

Send your comments and suggestions regarding this website to the
IEEE SCV EDS Chapter Webmaster .