Upcoming IEEE SCV EDS Evening Meeting:
Tuesday, August 12, 2008 IEEE SCV EDS Meeting:
"Current Status and Future Outlook of STT-RAM Technology"
Speaker: Dr. Yiming Huai, Grandis Inc.
Subject: "Current Status and Future Outlook of STT-RAM Technology"
Location: National Semiconductor, Building E1, Conference Center,
2900 Semiconductor Drive, Santa Clara, CA 95051.
See the NSC Campus driving directions
and the NSC Building E location map
Time: 6:00 PM - Pizza , 6:15 PM - Lecture
Speaker Contact:
Sachin Sonkusale
Abstract:
STT-RAM (spin-transfer torque memory) is a revolutionary new memory technology derived from Grandis’
pioneering research in Spintronics, that combines the capacity and cost benefits of DRAM, the fast
read and write performance of SRAM, the non-volatility of Flash, and essentially unlimited endurance.
It has superior write selectivity, excellent scalability beyond the 32 nm technology node, low power
consumption, and a simpler architecture and manufacturing process than first-generation MRAM. In
this presentation, we will review the current status of STT-RAM technology and device; discuss key
challenges, and future potential applications and products.
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Upcoming IEEE SCV EDS Evening Meeting:
Biography:
Yiming Huai has over 20 years’ technical and senior management experience in
thin-film materials, processing and devices. Prior to co-founding Grandis,
he served as Senior Thin-Film Director at Read-Rite Corporation, where he
led the development and manufacturing of industry-leading high-density
spin-valve recording heads for hard disk drives from 1996-2002. He previously
worked as a Staff Scientist at the Lawrence Livermore National Laboratory (LLNL)
on ultra-high density magnetic sensors and as a Post-Doctoral Fellow at the
National Research Council in Ottawa, Canada.
He received M.S. and Ph.D. degrees, both in Physics, from the University of
Montreal in Canada. He has published over 90 papers in scientific journals,
holds 50 patents and has more than 30 patents pending.
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