
	Electron Devices Society Santa Clara Valley Chapter http://www.ewh.ieee.org/r6/scv/eds/


The field of interest of the IEEE EDS is all aspects of the physics, theory, and phenomena of electron and ion devices, such as elemental and compound semiconductor devices, quantum effect devices, optical devices, tubes and other vacuum devices. Please Post and Circulate within your Company.	January 14, 2009
For an online version of this announcement with active links, please visit http://www.ewh.ieee.org/r6/scv/eds/announcements/ieee-scv-eds-20090401.html

April 14th Meeting
Dr. Carlos Galup-Montoro, UC Berkeley
"Charge and surface potential based MOSFET models, what are the differences? "

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Upcoming IEEE SCV EDS Evening Meeting:

Tuesday, April 14, 2009 "Charge and surface potential based MOSFET models, what are the differences? "

Speaker: Dr. Carlos Galup-Montoro, UC Berkeley Location: National Semiconductor, Building E1, Conference Center,
2900 Semiconductor Drive, Santa Clara, CA 95051.
See the NSC Campus driving directions
and the NSC Building E location map
Time: 6:00 PM - Pizza , 6:15 PM - Lecture
Speaker Contact: Samar Saha

Abstract:

To overcome the limitations of VT-based MOSFET models, a new class of models emerged, namely inversion charge-based and surface potential-based models.

Compact model developers have emphasized the differences between modeling approaches, particularly those related to the choice of a key variable (or parameter) in the model. The virtues (and defects) of the threshold voltage (VT)-based, surface potential and inversion charge based models have been extensively discussed. In this seminar we adopt another point of view; we emphasize not a particular variable but the different simplifications employed to derive the compact equations. In fact, most of the compact models for the MOSFET are based on the same main approximations: gradual-channel, charge-sheet, and bulk (body) charge linearization. The only difference between them is related to the details in the simplifications applied to the different equations. In this talk, the surface-potential and the charge-control models of the MOSFET are compared both theoretically and numerically and it is explained how to extract the main parameters for the charge-based model from simulation results obtained with the surface potential model.

Upcoming IEEE SCV EDS Evening Meeting:

Biography:

Carlos Galup-Montoro studied engineering sciences at the University of the Republic, Montevideo, Uruguay, and electronic engineering at the National Polytechnic School of Grenoble (INPG), France. He received an engineering degree in electronics in 1979 and a doctorate degree in 1982, both from INPG.

From 1982 to 1989 he was with the University of São Paulo, Brazil, where he was engaged in junction field effect transistor (JFET) fabrication and analog circuit design. Since 1990, he has been with the Electrical Engineering Department, Federal University of Santa Catarina, Florianópolis, Brazil where he is now a professor. From August 1997 to February 1998 he was a research associate with the Analog Mixed Signal Group, Texas A&M University. Currently he is on leave at UC Berkeley. His main research interests and expertise are in field effect transistor modeling and transistor-level design.

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