TUESDAY, Oct 13, 2009
IEEE Santa Clara Valley Electron Devices Chapter (EDS)
" Low
Frequency and High Frequency Noise in Bipolar Transistors”
Speaker: J. Prasad, DSM Solutions, Los Gatos.
Time: 6:00 PM - Pizza , 6:15 PM – Lecture
Cost: Free
Location: National Semiconductor,
Building E1, Conference Center ,
2900 Semiconductor Drive , Santa Clara , CA 95051
.
See the NSC Building location map and directions
Contact: J. Prasad
Web link: http://www.ewh.ieee.org/r6/scv/eds/
Abstract:
LF noise is very important for analog and mixed signal circuits.
The low frequency noise also affects the high frequency performance of
oscillators, VCOs and mixers by generating phase noise. In this talk, we review
popcorn noise, flicker noise, shot noise, thermal noise and their behavior.
Then, we describe the methods of measuring the noise in devices. HF noise
affects the performance of communication systems and sets the lower limit on
the minimum detectable signal. Noise figure NF is a better parameter to
characterize noise at higher frequencies. At any given frequency and Ic, there
are four noise parameters that are needed to characterize the high frequency
noise: minimum noise figure, noise resistance, optimum source conductance and
susceptance. In addition, the associated gain of the device is also a very
important parameter. We then study how NF varies with Ic and frequency. We
introduce the concept of noise temperature to help us in making noise figure
measurement. Set up for noise figure measurements are shown. We show typical
measurement results from transistors and discuss methods of minimizing noise
figure. We then perform phase noise and jitter calculations from 1/f noise for
practical system applications.
Biography:
Prasad obtained his Ph.D in Electrical Engineering from Oregon State University, Corvallis. Currently, he is the Director of Device Technology at DSM
Solutions where he is developing Complementary JFET technology. For the past
twenty seven years, he has been engaged in developing high-speed GaAs and SiGe
HBT technology. He has been with Tektronix for 12 years developing GaAs-based
HBT technology for high-speed oscilloscopes. He was a Tektronix Fellow and he
was the first in the world to demonstrate a 60GHz InGaP HBT IC technology with
28ps gate delay. During the past 12 years, he has been with National
Semiconductor, Micrel Semiconductor and Maxim Integrated Products where he has
developed SiGe BiCMOS processes for wireless and fiber optic applications which
have resulted in several products. Prior to the HBT work, Prasad has developed
E2PROM processes at National Semiconductor and contributed to VMOS
processes at AMI Semiconductor. Prasad is an IEEE Fellow and a Distinguished
Lecturer of IEEE Electron Devices Society. He served in the advisory committees
for research programs at University of Illinois, Urbana-Champaign and University of Washington, Seattle. He is a member of the IEEE technical committees on Compound
Semiconductor Devices, Compact Modeling and Education. He serves in the IEEE
Technical Field Awards and Fellow evaluation committees. Prasad has been
serving in the technical committees of BCTM and IEDM. Prasad was an Adjunct
Professor at Oregon State University. Currently, he is an adjunct faculty at Santa Clara University.
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