Tuesday, November 19th, 2013
Western Digital, 1710 Automation Parkway, San Jose, CA
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Presentation at 7:30 P.M.
Tuning magnetic anisotropy in (001) oriented L10 (Fe1-xCux)55Pt45 films
Dustin A. Gilbert1, presentor,
Liang-Wei Wang2, Timothy J. Klemmer3, Jan-Ulrich Thiele3, Chih-Huang Lai2, and Kai Liu1,*
1Physics Department, University of California, Davis, CA 95616 USA
2Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
3Seagate Technology, Fremont, CA 94538 USA
Abstract
The development of high anisotropy magnetic materials that are compatible
with industrial processing is critical in advancing magnetic recording,
permanent magnet, and spintronic technologies.
Specifically, high anisotropy materials are necessary to ensure long-term
thermal stability in magnetic nanoelements, such as ultra-high density
recording media and magnetic memory. A material of particular interest is
L10 ordered FePt because of its large magneto-crystalline anisotropy,
saturation magnetization, and chemical stability. A key limiting factor
has been the high annealing temperature necessary to transform the as-
deposited disordered face centered cubic (fcc) A1 phase into the ordered
tetragonal L10 phase.
We have achieved (001) oriented L10 (Fe1-xCux)55Pt45
thin films, with magnetic anisotropy up to 3.6×107 erg/cm3, using atomic-
scale multilayer sputtering and post annealing at 400 °C for 10 seconds,
which is a much lower temperature annealing for a much shorter time
compared to earlier studies. By fixing the Pt concentration, structure
and magnetic properties are systematically tuned by the Cu addition.
Increasing Cu content results in an increase in the tetragonal distortion
of the L10 phase, significant changes to the film microstructure, and
lowering of the saturation magnetization and anisotropy. The relatively
convenient synthesis conditions, along with the tunable magnetic
properties, make such materials highly desirable for future magnetic
recording technologies.
This work has been supported by the NSF (DMR-1008791). Work at NTHU has been
supported in part by Hsinchu Science Park of Republic of China under Grant No.
101A16.
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