Tuesday, April 11, 2017
Western Digital, 1710
Automation Parkway, San Jose, CA 95131
& Pizza at 6:30 P.M.
Presentation at 7:00 P.M.
Spin Transfer Torque Magneto-Resistive Random Access Memory
Barry Hoberman, CEO and Chairman of the Board, Spin Transfer Technologies, Inc.
Thin film magnetics has been the heart of high density, high latency data storage for decades. Semiconductor memory has filled the province of high throughput, low latency data storage. Advances in semiconductor memory, particularly Flash, have enabled SSD's to encroach on the disk storage world. Conversely, a technology from the historical disk drive domain of thin film magnetics will soon drive a new segment of semiconductor memory. The magnetic tunnel junction, or MTJ, implemented with perpendicular magnetic orientation, and leveraging 'spin transfer torque' switching, will soon emerge to enable a significant new position in the semiconductor memory market. New techniques for improving the switching characteristics of pMTJ devices will advance the state of the industry.
Barry Hoberman has served as CEO and Chairman of Spin Transfer Technologies since 2012. He has over 35 years of management and engineering expertise in the semiconductor industry. Prior to his current role, he served as chief marketing officer at Crocus Technology, a semiconductor company. Earlier, Hoberman was the founder and CEO of inSilicon, a leading semiconductor IP supplier, which was acquired by Synopsys in 2002. His leadership experience also includes CEO positions with Virtual Silicon and T-Zero Technologies. Earlier in his career, Hoberman held management positions at AMD and Monolithic Memories. Hoberman holds B.S. degrees in Electrical Engineering and Biology from the Massachusetts Institute of Technology, and over 30 US patents.
Link to presentation material to be added.
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