IEEE Santa Clara Valley Reliability Chapter
Daniel Felnhofer, BSCS, MSEE
Daniel Felnhofer is currently a senior staff engineer at Qualcomm Technologies, Inc. He works in the integration and test team within the Sensors Technology group, where he leads the test framework development activities. As part of his 10 years at Qualcomm, Daniel worked in R&D for Qualcomm MEMS Technologies. He was a member of the Device & Reliability Physics group where he worked on the characterization and reliability of capacitive MEMS devices. In particular, Daniel developed and implemented methodologies to characterize fabrication processes, materials and devices. During his time at QMT, Daniel generated numerous invention disclosures, patents, trade secrets and publications. Daniel obtained his B.Sc in Computer Engineering and M.Sc. in Electrical Engineering from the University of Manitoba. He was awarded a Natural Sciences and Engineering Research Council of Canada (NSERC) Postgraduate Scholarship and his graduate work focused on the characterization of electronic defects in high-k HfO2 gate dielectrics.