Conversor integrado cero-IF en tecnología SiGe:C BiCMOS para WLAN 802.11a (A single-chip Zero-IF down-converter in SiGe:C BiCMOS technology for WLAN 802.11a)

Yolanda Jato Llano (jatoy@unican.es), Amparo Herrera Guardado (amparo.herrera@unican.es)


Universidad de Cantabria
This paper appears in: Revista IEEE América Latina

Publication Date: June 2009
Volume: 7,   Issue: 2 
ISSN: 1548-0992


Abstract:
A direct conversion front-end for the 802.11a/HiperLAN standard is presented in this paper. The front-end is composed of a low noise amplifier and a mixer, both fabricated in a 0.4 um SiGe:C BiCMOS technology. The circuits were designed, fabricated and tested independently and then the integration of the front-end in the same chip (SoC) was carried out. Differential topologies were chosen for the circuits in order to overcome the inherent drawbacks of the direct conversion configuration, such as dc offsets and phase mismatches. The front-end exhibits a simulation gain of 26 dB at the frequency range of 5.1-5.9 GHz, a noise figure of 5.7 dB and 1 dB compression point of ‑22.5 dBm at the input. The circuit provides a IIP3 of ‑8.5 dBm and a IIP2 of 28.6 dBm.

Index Terms:
Direct conversion, LNA, mixer, SiGe, WLAN   


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