Desarrollo de un Código Computacional para el Análisis de Celdas Solares de Si y GaAs expuestas a Radiación Espacial (Numerical Analysis of Si and GaAs Solar Cells Exposed to Space Radiation)

Marcelo A. Cappelletti (marcelo.cappelletti@ing.unlp.edu.ar), Guillermo A. Casas (gcasas@ing.unlp.edu.ar), Ariel P. Cédola (ariel.cedola@ing.unlp.edu.ar), Eitel L. Peltzer y Blanca (eitelpyb@ing.unlp.edu.ar)


Universidad Nacional de La Plata
This paper appears in: Revista IEEE América Latina

Publication Date: Feb. 2013
Volume: 11,   Issue: 1 
ISSN: 1548-0992


Abstract:
In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 109 and 1013 p+/cm2. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.

Index Terms:
device modeling, numerical simulation, proton radiation effects, solar cells   


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