Estudio de la movilidad para p-MOS con dieléctrico de HfO2 y con arquitectura de tipo FDSOI-UTTB sometidos a una polarización al substrato (Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases)

Lionel Trojman (ltrojman@usfq.edu.ec)1


1Universidad San Francisco de Quito (USFQ)

This paper appears in: Revista IEEE América Latina

Publication Date: Oct. 2016
Volume: 14,   Issue: 10 
ISSN: 1548-0992


Abstract:
In this work the variation of the FDSOI-UTTB p-MOS mobility is studied for different biases of the buried oxide. Two dielectrics are considered: HfO2 (high-k) with 8A-EOT and a SiON reference. The substrate biases (through the buried oxide) enables a mobility of about 150 cm2/V.s (90% improvement) similar to the SiON reference (with back bias) and close to the results obtained for conventional high-k n-MOS. This 90% improvement is explained by a based physics model which describes a variation of the inversion charge centroid towards the buried oxide for large substrate biases.

Index Terms:
mobility, high-k, HfO2, FDSOI, UTTB, UTEOT, EOT, SiON, MOSFET, p-MOS, Split-CV, RCS, interface defects   


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