Estudio del efecto del esclamiento y de la temperatura de celdas RERAM usando el modelo QPC (Study of the scaling and the temperature for RERAM cells using the QPC model)

Lionel Trojman (ltrojman@usfq.edu.ec)1, Silvana Guitarra (sguitarra@usfq.edu.ec)1, Luis Miguel Procel (lprocel@usfq.edu.ec)1, Laurent Raymond (laurent.raymond@im2np.fr)2


1Universidad San Francisco de Quito
2Aix-Marseille University

This paper appears in: Revista IEEE América Latina

Publication Date: Dec. 2016
Volume: 14,   Issue: 12 
ISSN: 1548-0992


Abstract:
This article describes the OXRAM cell operation for different areas and temperatures using the Quantum Point Contact (QPC) model. Based on the QPC model the RERAM cell is described by a potential barrier variation using 2 parameters. The systematic extraction of this parameter for experimental I-V curves leads to conclude that the OXRAM cell does not depend on the scaling area cell but the temperature seems to degrade the performance cell above all for RERAM cell with dimension under 100nm. Further the needed energy to form the cells is increasing with the area scaling.

Index Terms:
RERAM, QPC model, high-κ,, HfO2, TiN, Temperature, area scaling.   


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