Metal-Oxide-Semiconductor Calculator Applet

It calculates various parameters of the metal-oxide-semiconductor structure.  Parameters that can be calculated are: metal-semiconductor workfunction difference (Wms), the flat-band voltage (VFB), and the threshold voltage (VT).  Also calculated are the oxide capacitance (Co), the bias voltage needed to create a strong-inversion condition in semiconductor (PhiSI), the maximum depletion width in semiconductor (xdm) that occurs under the strong inversion condition, and the space-charge or bulk-charge (QB) in the semiconductor under the strong inversion condition.

This applet is to be used in conjunction with other MOS and MOSFET applets.  This applet will be particularly useful in the MOSFET design problem.  Links to other MOS applets will be provided as they become available.  

Note on browser: The applet is written in Java1.1.  As of May 14, 1997, it can only run in the HotJava1.0 browser. Netscape and InternetExplorer do not run the Java1.1 yet.  An alternative way exists if you have installed the JDK1.1 (Java development kit) in your local computer.  If so, just save this webpage in your hard disk and use the appletviewer to run: appletviewer moscal.html.



Copyright (c) C.R.Wie, SUNY-Buffalo, 1998-2000.

Usage:  
  • Type new values in and hit RETURN for the oxide thickness (to), oxide fixed charge (Qo), and the semiconductor doping level (N).
  • Select the gate metal and the conduction-type of Si. 
  • The work functions (Wm and Ws) and the oxide capacitance are immediately updated.
  • For Wms, VFB, and VT for the new input values, press the Recalculate button.